e sd5374d l ow c apacitance trans ient voltage suppressors array descriptions the esd53 74d is a low capacitance tvs (transient voltage suppressor) array designed to protect high speed data interfaces. it incorporates 3 lines low capacitance tvs diodes and 1 line high surge capability tvs diode in one package , it is suitable to replace multiple discrete components in portable electronics. the esd53 74d is specifically designed to protect usb port. 3 lines of low capacitance tvs diodes are used to protect usb da ta (dp, dm) and usb id pins operating up to 5v. 1 line of tvs diode with higher surge capability of 90a ( 8/20 s ) is used to protect usb voltage bus pin operating up to 12v . the esd53 74d may be used to provide esd protection up to 20 k v ( dp, dm, id pins ) an d 30 k v ( v b us pin ) according to iec61000 - 4 - 2 contact discharge , and withstand peak pulse current up to 4 a ( dp, dm, id pins ) and 90a (v b us pin ) according to iec61000 - 4 - 5 ( 8/20 s ) . the esd 5374 d is available in dfn1.8 2.0 - 6l package. standard products are pb - free and halogen - free. features ? reverse s tand - off voltage: 5 v m ax . ( dp, dm, id pins ) 12v max. (v b us pin ) ? esd protection according to iec61000 - 4 - 2 contact & air d ischarge : 2 0 k v ( dp, dm, id pins ) 30kv ( v b us pin ) ? surge protection according t o iec61000 - 4 - 5 8/20 s waveform : 4 a ( dp, dm, id pins ) 90a ( v b us pin ) ? l ow capacitance: c j = 0.40 pf typ. (dp, dm, id pins ) ? l ow clamping voltage ? solid - state silico n technology applications ? usb 2.0 ? usb otg circuit diagram pin configuration (top view) 5374 = device code td = fixed code yw = date code marking order i nformation device package shipping esd 5374d - 6 /tr dfn1.8 2.0 - 6l 3000/tape&reel 3 4 5 , 6 2 1 1 2 v 5 v 5 3 7 4 t d y w p i n 1 i n d i c a t o r 1 g n d v b u s d p d m i d g n d g n d 2 3 4 6 5 g n d 1 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification 3 4 5 , 6 2 1 1 2 v 5 v 5 3 7 4 t d y w p i n 1 i n d i c a t o r 1 g n d v b u s d p d m i d g n d g n d 2 3 4 6 5 g n d
absolute m aximum r ating s electrical characteristics ( t a = 25 o c , unless otherwise noted ) definiti ons of electrical characteristi c s parameter symbol rating unit us b dp, dm, id tvs peak pulse power ( t p = 8/20 s) p pk 56 w peak pulse current (t p = 8/20 s) i pp 4 a esd according to iec61000 - 4 - 2 air discharge v esd 2 0 k v esd according to iec61000 - 4 - 2 contact discharge 2 0 operation junction temperature t j 1 25 o c lead temperature t l 260 o c storage temperatur e t stg - 55~150 o c vbus tvs peak pulse power (t p = 8/20s) p pk 2 7 00 w peak pulse current (t p = 8/20s) i pp 9 0 a esd according to iec61000 - 4 - 2 air discharge v esd 30 kv esd according to iec61000 - 4 - 2 contact discharge 30 operation junction temperatur e t j 125 o c lead temperature t l 260 o c storage temperature t stg - 55~150 o c i v v f v r w m v b r v f c i p p i f i r i b r v c l i p p v f f o r w a r d v o l t a g e i f f o r w a r d c u r r e n t v f c f o r w a r d c l a m p i n g v o l t a g e i p p p e a k p u l s e c u r r e n t v r w m r e v e r s e s t a n d - o f f v o l t a g e i r r e v e r s e l e a k a g e c u r r e n t v b r r e v e r s e b r e a k d o w n v o l t a g e v c l c l a m p i n g v o l t a g e i p p p e a k p u l s e c u r r e n t e sd5374d 2 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification i v v f v r w m v b r v f c i p p i f i r i b r v c l i p p v f f o r w a r d v o l t a g e i f f o r w a r d c u r r e n t v f c f o r w a r d c l a m p i n g v o l t a g e i p p p e a k p u l s e c u r r e n t v r w m r e v e r s e s t a n d - o f f v o l t a g e i r r e v e r s e l e a k a g e c u r r e n t v b r r e v e r s e b r e a k d o w n v o l t a g e v c l c l a m p i n g v o l t a g e i p p p e a k p u l s e c u r r e n t
electrical characteristics ( t a = 25 o c , unless otherw ise noted ) notes: 1) tlp parameter: z 0 = 50 , t p = 100ns, t r = 2n s, averaging window from 60ns to 80ns. r dyn is calculated from 4a to 16a. 2) contact di scharge mode, according to iec61000 - 4 - 2. 3) non - repetitive current pulse, according to iec61000 - 4 - 5. parameter symbol condition min. typ. max. unit usb dp, dm, id tvs reverse stand - off voltage v rwm 5.0 v rever se leakage current i r v rwm = 5 v < 1 1 00 n a rever se breakdown voltage v br i br = 1ma 7.0 8. 0 9.0 v forward voltage v f i f = 1 0ma 0.6 0. 9 1.2 v clamping voltage 1) v cl i pp = 16a, t p = 100ns 17 .5 v clamping voltage 2 ) v cl v esd = +8kv 17 .5 v clamping voltage 3 ) v cl i pp = 1a, t p = 8/20s 1 1 v i pp = 4 a, t p = 8/20s 1 4 v dynamic resistance 1) r dyn 0.5 5 junction capacitan ce c j v r = 0v, f = 1mhz, pin2, 3, 4 to gnd 0.40 0.65 pf v r = 0v, f = 1mhz, between pin2, 3, 4 0.25 0.40 pf vbus tvs reverse stand - off voltage v rwm 12 v reverse leakage current i r v rwm = 12 v 500 n a reverse breakdown voltage v br i br = 1ma 13. 5 15.0 16.5 v forward voltage v f i f = 1 0ma 0. 4 0. 7 1. 0 v clamping voltage 3 ) v cl i pp = 30 a, t p = 8/20s 2 2 v i pp = 90 a , t p = 8/20s 3 0 v junction capacitance c j v r = 0v, f = 1mhz, pin1 to gnd 800 1200 pf e sd5374d 3 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics ( t a = 25 o c , unless otherwise note d) 8/20 s waveform per iec61000 - 4 - 5 clamping voltage vs. peak pulse cur rent ` dp, dm, id pins clamping voltage vs. peak pulse current vbus pin contact discharge current waveform per iec61000 - 4 - 2 non - repetitive peak pulse power vs. pulse time (dp, dm, id pins) non - repetit ive peak pulse power vs. pulse time (vbus pin ) t 60ns 30ns t r = 0.7~1ns 10 90 100 current (%) time (ns) 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 90 100 110 t 2 t 1 front time: t 1 = 1.25 ? ? t = 8 ? s time to half-value: t 2 = 20 ? s peak pulse current (%) time ( ? s) t 1 10 100 1000 100 1000 10000 peak pulse power (w) pulse time ( ? s) 0 20 40 60 80 100 16 20 24 28 pulse waveform: t p = 8/20 ? s v c - clamping voltage (v) i pp - peak pulse current (a) 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse time ( ? s) 0 1 2 3 4 5 8 9 10 11 12 13 14 pulse waveform: t p = 8/20 ? s v c - clamping voltage (v) i pp - peak pulse current (a) e sd5374d 4 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification t 60ns 30ns t r = 0.7~1ns 10 90 100 current (%) time (ns) 0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80 90 100 110 t 2 t 1 front time: t 1 = 1.25 u t = 8 p s time to half-value: t 2 = 20 p s peak pulse current (%) time ( p s) t 1 10 100 1000 100 1000 10000 peak pulse power (w) pulse time ( p s) 0 20 40 60 80 100 16 20 24 28 pulse waveform: t p = 8/20 p s v c - clamping voltage (v) i pp - peak pulse current (a) 1 10 100 1000 1 10 100 1000 peak pulse power (w) pulse time ( p s) 0 1 2 3 4 5 8 9 10 11 12 13 14 pulse waveform: t p = 8/20 p s v c - clamping voltage (v) i pp - peak pulse current (a)
typical characteristics ( t a = 25 o c , unless otherwise note d) capacitance vs. reveres voltage dp, dm, id pins esd clamping +8kv contact discharge (dp, dm, id pins) tlp measurement (dp, dm, id pins) power derating vs. ambient temperature esd clamping - 8kv contact discharge (dp, dm, id pins) 0 1 2 3 4 5 0.36 0.38 0.40 0.42 0.44 f = 1mhz v ac = 50mv c j - junction capacitance (pf) v r - reverse voltage (v) 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 z 0 = 50 ? t r = 2ns t p = 100ns tlp current (a) tlp voltage (v) e sd5374d 5 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification 0 1 2 3 4 5 0.36 0.38 0.40 0.42 0.44 f = 1mhz v ac = 50mv c j - junction capacitance (pf) v r - reverse voltage (v) 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power t a - ambient temperature ( o c) 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 12 14 16 18 20 z 0 = 50 : t r = 2ns t p = 100ns tlp current (a) tlp voltage (v)
package outline dimensions dfn1.82.0 - 6l recommend ed l and p attern (unit: mm) symbol dimensions in millimeters min. typ. ma x. a 0.700 0.750 0.800 a1 0.000 -- 0. 050 a 3 0.203 ref. d 1.700 1.800 1.900 e 1.900 2.000 2.100 d1 0.3 0 0 0.400 0.500 e1 0.740 0.840 0.940 d2 0.550 0.600 0.650 b 0.150 0.200 0.250 e 0.400 typ. e 1 0.800 typ. k 0.200 min. l 0.174 0.250 0.326 l1 0 .150 0.200 0.250 top view side view bottom view 0 . 2 0 . 5 0 . 4 1 . 3 5 0 . 8 0 . 8 4 0 . 5 0 . 5 note s : t his recommended lan d pattern is for reference purposes only. please consult your manufacturing group to ensure your pcb design guidelines are met. e sd5374d 6 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification 0 . 2 0 . 5 0 . 4 1 . 3 5 0 . 8 0 . 8 4 0 . 5 0 . 5
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